EID1415A1-5
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
UPDATED 07/12/2007
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
SYMBOL
CHARACTERISTIC
VALUE
VDS
VGS
IDS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
10 V
-4.5 V
IDSS
IGSF
PIN
PT
Forward Gate Current
Input Power
40 mA
@ 3dB compression
23 W
Total Power Dissipation
Channel Temperature
Storage Temperature
TCH
150°C
TSTG
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 10 V, IDSQ ≈ 1200mA
S11 and S22
S21 and S12
Swp Max
16GHz
20
10
S[1,1]
*
EID1415-5
S[2,2]
*
EID1415-5
0
DB(|S[2,1]|)
EID1415-5
*
*
-10
-20
-30
DB(|S[1,2]|)
EID1415-5
14
14.5
15
15.5
16
Frequency (GHz)
Swp Min
14GHz
FREQ
(GHz)
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
MAG
ANG
MAG
2.134
2.225
2.312
2.380
2.417
2.417
2.375
2.306
2.200
2.087
1.973
ANG
MAG
0.053
0.054
0.060
0.062
0.065
0.064
0.066
0.061
0.061
0.060
0.056
ANG
MAG
ANG
14.00
14.20
14.40
14.60
14.80
15.00
15.20
15.40
15.60
15.80
16.00
0.486
0.438
0.369
0.285
0.188
0.088
0.061
0.151
0.245
0.322
0.389
-82.890
-93.780
-106.050
-119.390
-137.440
-167.830
87.400
41.970
22.850
8.370
-168.830
177.610
163.060
147.370
131.260
114.830
98.420
82.120
66.090
50.830
36.210
-178.670
167.150
151.050
136.610
120.170
102.290
87.850
69.710
55.880
40.490
25.780
0.469
0.410
0.343
0.277
0.238
0.249
0.290
0.340
0.383
0.411
0.424
-164.400
-177.270
167.160
144.230
113.450
79.350
52.140
32.490
17.290
4.630
-3.480
-7.330
Issued Date: 04-27-04
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
