EIC7785-8
UPDATED 08/21/2007
7.70-8.50GHz 8-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
THIRD-ORDER
40
INTERCEPT POINT IP3
35
IP3 = Pout + IM3/2
30
25
20
15
10
5
PotentiallyUnsafe
Operating Region
f1 or f2
Pout
IM3
Pin
Safe Operating
Region
IM3
(2f1-f2) f1 f2 (2f2-f1)
f1 f2
(2f2 - f1) or (2f1 - f2)
0
0
25
50
75
100
125
150
175
Pin [S.C.L.] (dBm)
Case Temperature (°C)
Typical Power Data (VDS = 10 V, IDSQ = 2200 mA)
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
41
12
11
10
9
f1 = 8.50 GHz, f2 = 8.51 GHz
-20
-25
-30
-35
-40
-45
-50
-55
40
39
38
37
8
IM3 (dBc)
32 33 34
P-1dB (dBm)
8.2
G-1dB (dB)
8.4 8.6
-60
36
7
23
24 25
26
27
28 29
30
31
7.6
7.8
8.0
Frequency (GHz)
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007