EIC5359-8
5.30-5.90GHz, 8W Internally Matched Power FET
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5.30-5.90 GHz BANDWIDTH
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
10 dB Power Gain at 1dB Compression
33% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm
Hermetic Metal Flange Package
Excelics
EIC5359-8
YM
SN
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIC5359-8
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
Gain at 1dB Compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
Power Added Efficiency at 1dB compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
Drain Current at 1dB Compression
Output 3
rd
Order Intermodulation Distortion
f=5.90GHz,
∆f=10MHz
2-Tone Test. Pout=28.5dBm S.C.L
Saturated Drain Current
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=40mA
-43
MIN
38.5
9
TYP
39.5
10
33
2200
-46
4000
-2.5
3.5
4500
-4
4
o
MAX
UNIT
dBm
dB
%
P
1dB
G
1dB
PAE
Id
1dB
IM
3
I
dss
V
p
R
th
2600
mA
dBc
mA
V
C/W
Thermal Resistance (Au-Sn Eutectic Attach)
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
CONTINUOUS
1,2
10V
-4.5V
Idss
80mA
@ 3dB Compression
150
o
C
-65 to +150
o
C
32W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
