EIC1414-8
ISSUED 6/30/2006
14.0-14.5 GHz 8-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
14.0– 14.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
24% Power Added Efficiency
Hermetic Metal Flange Package
.060 MIN.
Excelics
EIC1414-8
.060 MIN.
.650±.008 .512
GATE
.319
DRAIN
.022
.094
.382
.004
.129
.045
.070 ±.008
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Gain at 1dB Compression
f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Gain Flatness
f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
2200mA
f = 14.0-14.5GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
38.5
4.0
TYP
39.0
5.0
MAX
UNITS
dBm
dB
±0.6
24
2300
4000
-2.5
3.5
2600
5000
-4.0
4.0
o
dB
%
mA
mA
V
C/W
f = 14.0-14.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
86.4mA
-14.4mA
38.5dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
38W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
38W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised June 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
