EIC1314-4
UPDATED 08/21/2007
13.75-14.50GHz 4-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
THIRD-ORDER
30
INTERCEPT POINT IP3
25
IP3 = Pout + IM3/2
PotentiallyUnsafe
Operating Region
f1 or f2
20
Pout
IM3
15
Pin
Safe Operating
Region
10
5
IM3
(2f1-f2) f1 f2 (2f2-f1)
f1 f2
(2f2 - f1) or (2f1 - f2)
0
0
25
50
75
100
125
150
175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
IM3 vs Output Power
P-1dB & G-1dB vs Frequency
37
9
8
7
6
5
4
f1 = 14.5 GHz, f2 = 14.51 GHz
-15
-20
-25
-30
-35
-40
-45
-50
36
35
34
33
IM3 (dBc)
P-1dB (dBm)
14.2 14.4
G-1dB (dB)
14.6
-55
32
13.4
19 20 21 22 23 24 25 26 27 28 29 30 31 32
Pout [S.C.L.] (dBm)
13.6
13.8
14.0
14.8
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
