EIC1314-12
ISSUED 10/17/2008
13.75-14.50 GHz 12-Watt Internally Matched Power FET
Power Dissipation v.s Temperature
THIRD-ORDER
INTERCEPT POINT IP3
100
80
60
40
20
IP3 = Pout + IM3/2
f1 or f2
Pout
IM3
Pin
IM3
(2f1-f2) f1 f2 (2f2-f1)
f1 f2
0
0
(2f2 - f1) or (2f1 - f2)
50
100
150
200
Case Temperature / °C
Pin [S.C.L.] (dBm)
IM3 v.s Output Power
f1=14.5 GHz, f2=14.49 GHz
-20
-30
-40
-50
-60
-70
-80
13
16
19
22
25
28
31
Pout (S.C.L) / dBm
Typical IMD3 Data (T= 25°C)
VDS = 10 V, IDSQ ≈ 65% IDss
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised October 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
