EIC1011-4
UPDATED 08/21/2007
10.70-11.70GHz 4-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
THIRD-ORDER
30
INTERCEPT POINT IP3
25
IP3 = Pout + IM3/2
PotentiallyUnsafe
Operating Region
20
f1 or f2
Pout
IM3
15
Pin
Safe Operating
Region
10
5
IM3
(2f1-f2) f1 f2 (2f2-f1)
f1 f2
(2f2 - f1) or (2f1 - f2)
0
0
25
50
75
100
125
150
175
Pin [S.C.L.] (dBm)
Case Temperature (°C)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
38
10
9
f1 = 11.70 GHz, f2 =11.71 GHz
-15
-20
-25
-30
-35
-40
-45
-50
-55
37
36
35
34
8
7
6
P-1dB (dBm)
G-1dB (dB)
11.6
IM3 (dBc)
-60
33
10.6
5
20
21
22
23
24
25
26
27
28
29
30
31
32
10.8
11.0
11.2
11.4
11.8
Frequency (GHz)
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007