EIA1415-5
UPDATED 11/17/2006
14.40-15.35GHz 5-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
•
.060 MIN.
Excelics
EIA1415-5
YYWW
SN
.094
.382
.060 MIN.
14.40– 15.35GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
33% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.650±.008 .512
GATE
.319
DRAIN
.022
.045
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f =14.40-5.35GHz
V
DS
= 8 V, I
DSQ
≈
1400mA
Gain at 1dB Compression
f =14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
1400mA
Gain Flatness
f =14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
1400mA
Power Added Efficiency at 1dB Compression
f =14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
1400mA
Drain Current at 1dB Compression f =14.40-15.35GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 29 mA
Caution! ESD sensitive device.
MIN
35.5
6.0
TYP
36.5
7.0
±0.6
33
1700
2880
-1.0
5.5
2000
3600
-2.5
6.0
o
MAX
UNITS
dBm
dB
dB
%
mA
mA
V
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
V
DS
V
GS
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
10
-5
43.2mA
-7.2mA
35.5dBm
175
o
C
-65 to +175
o
C
25W
8V
-3V
14.4mA
-2.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
25W
Note: 1) Exceeding any of the above ratings may result in permanent damage.
2) Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
