EFE960EV-250P
ISSUED 01/03/2006
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
•
Non-Hermetic 250mil Metal Flange Package
+36.5 dBm Typical Output Power
15.0 dB Typical Power Gain at 2GHz
0.6 x 9600 Micron Recessed “Mushroom”Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f = 2GHz
f = 4GHz
V
DS
= 10 V, I
DS
≈
50% I
DSS
Gain at 1dB Compression
f = 2GHz
f = 4GHz
V
DS
= 10 V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DS
≈
50% I
DSS
f = 2GHz
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 20 mA
I
GD
= 9.6 mA
I
GS
= 9.6 mA
-19
-10
MIN
35.0
13.5
TYP
36.5
36.5
15.0
11.0
36
1500
2000
1000
-2.5
-22
-20
5.5*
6.0*
o
MAX
UNITS
dBm
dB
%
2500
-4.0
mA
mS
V
V
V
C/W
Thermal Resistance
R
TH
* Overall Rth depends on case mounting.
MAXIMUM RATINGS
1,2
(T
a
= 25°C)
SYMBOL
V
DS
V
GS
I
DS
I
GSF
I
GSR
P
IN
P
T
T
CH
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Reverse Gate Current
Input Power
Total Power Dissipation
Channel Temperature
ABSOLUTE
15 V
-5 V
Idss
43.2 mA
-7.2 mA
33.5 dBm
25 W
175°C
CONTINUOUS
10 V
-4 V
2.5 A
14.4 mA
-2.4 mA
@ 3dB compression
25 W
175°C
-65/+175°C
T
STG
Storage Temperature
-65/+175°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1of 1
Revised January 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
