EFC240B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq
GHz
S11
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
1.000 0.944 -86.7 7.064 130.8 0.041
2.000 0.915 -125.9 4.551 104.6 0.052
41.9 0.296 -132.9
22.7 0.374 -146.8
13.2 0.409 -152.2
6.7 0.433 -154.1
2.7 0.460 -157.6
0.1 0.487 -158.3
-2.2 0.512 -159.2
-3.4 0.549 -161.0
-4.5 0.586 -161.9
-5.2 0.620 -162.0
-6.2 0.647 -162.2
-7.5 0.673 -163.2
-7.5 0.690 -165.6
-7.7 0.716 -168.5
-7.0 0.739 -170.1
-6.4 0.752 -172.8
-7.5 0.764 -177.3
-6.2 0.776 176.4
-6.5 0.791 169.8
-3.8 0.813 164.9
-5.3 0.835 168.3
-2.1 0.847 166.2
0.6 0.870 163.7
2.9 0.876 162.1
7.7 0.887 160.5
10.4 0.897 160.1
3.000 0.907 -144.8 3.217
4.000 0.907 -155.6 2.450
5.000 0.912 -161.6 1.929
6.000 0.911 -166.1 1.596
7.000 0.920 -169.0 1.362
8.000 0.915 -171.1 1.181
9.000 0.919 -173.3 1.040
10.000 0.922 -176.1 0.922
11.000 0.925 -179.2 0.826
12.000 0.932 178.8 0.747
13.000 0.933 177.0 0.681
14.000 0.939 175.4 0.622
15.000 0.941 172.9 0.569
16.000 0.945 170.6 0.522
17.000 0.946 169.7 0.483
18.000 0.952 170.3 0.452
19.000 0.955 170.4 0.421 -12.7 0.034
20.000 0.955 168.7 0.387 -18.0 0.035
21.000 0.954 160.5 0.359 -23.1 0.034
22.000 0.948 158.1 0.327 -26.7 0.035
23.000 0.958 157.0 0.303 -30.7 0.035
24.000 0.956 156.1 0.275 -33.9 0.036
25.000 0.961 155.3 0.251 -36.4 0.038
26.000 0.954 153.5 0.232 -39.0 0.036
89.3 0.055
78.1 0.054
69.0 0.052
60.9 0.050
54.1 0.049
47.7 0.047
41.7 0.045
35.7 0.041
30.0 0.041
24.7 0.039
19.1 0.037
13.8 0.035
8.5 0.035
3.0 0.035
-2.1 0.035
-7.0 0.034
Note: The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each.
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
