Excelics
PRELIMINARY DATA SHEET
•
•
•
•
•
•
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+25.0dBm TYPICAL OUTPUT POWER
10.5dB TYPICAL POWER GAIN AT 12GHz
HIGH BVgd FOR 10V BIAS
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 10mA PER BIN RANGE
EFC060B
Low Distortion GaAs Power FET
350
50
D
48
350
100
40
S
G
S
95
50
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=10V, Idss=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.5mA
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
23.0
9.0
TYP
25.0
25.0
10.5
8.0
35
MAX
UNIT
dBm
dB
%
80
50
130
70
-2.5
180
mA
mS
-4.0
V
V
V
o
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-15
-10
-20
-17
75
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
14V
10V
Vds
Gate-Source Voltage
-8V
-4.5V
Vgs
Drain Current
Idss
150mA
Ids
Forward Gate Current
15mA
2.5mA
Igsf
Input Power
23dBm
@ 3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
1.8W
1.5W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
