EFA025AL
DATA SHEET
High Gain GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
MAG ANG MAG
--- S22 ---
ANG
(GHz) MAG ANG
1.0 0.990 -19.8
2.0 0.970 -38.4
3.0 0.927 -55.0
4.0 0.895 -69.0
5.0 0.862 -81.3
6.0 0.838 -91.8
7.0 0.815 -101.4
8.0 0.802 -110.2
9.0 0.779 -118.3
10.0 0.769 -125.4
11.0 0.765 -132.3
12.0 0.764 -139.0
13.0 0.769 -144.9
14.0 0.771 -150.5
15.0 0.779 -155.4
16.0 0.781 -159.8
17.0 0.786 -163.1
18.0 0.793 -166.7
19.0 0.794 -170.0
20.0 0.786 -173.1
21.0 0.773 -175.2
22.0 0.762 -177.7
23.0 0.763 -179.9
24.0 0.762 176.7
25.0 0.759 173.1
26.0 0.753 170.5
MAG ANG
5.439 163.7
5.095 150.4
4.719 137.3
4.328 126.3
3.961 116.0
3.630 107.0
0.014
0.027
0.037
0.043
0.049
0.051
0.054
0.055
0.056
0.053
0.052
0.051
0.051
0.050
0.051
0.053
0.056
0.061
0.063
0.067
0.070
0.071
0.076
0.083
0.088
0.092
78.3 0.787
68.7 0.772
58.7 0.751
52.7 0.727
45.8 0.709
41.8 0.692
37.2 0.681
33.0 0.675
28.4 0.663
25.0 0.655
23.8 0.651
22.4 0.645
20.1 0.636
19.7 0.628
20.2 0.619
20.5 0.614
19.3 0.593
17.0 0.580
16.1 0.577 -105.2
14.6 0.582 -116.6
12.7 0.590 -128.3
13.3 0.604 -138.3
16.5 0.637 -146.1
16.6 0.678 -153.2
16.8 0.703 -158.7
17.9 0.721 -161.8
-7.4
-14.1
-20.6
-26.3
-32.1
-37.1
-42.0
-46.6
-51.0
-54.8
-58.5
-62.0
-65.3
-69.1
-73.7
-79.6
-86.9
-95.4
3.327
3.078
2.822
2.613
2.436
2.285
2.150
2.032
1.945
1.852
1.783
1.732
1.674
1.607
1.505
1.437
1.368
1.305
98.8
90.9
83.7
77.3
71.1
64.8
58.9
53.3
47.5
41.3
35.8
29.6
22.7
15.7
9.1
3.0
-2.4
-8.5
1.235 -14.3
1.168 -18.0
Note:
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
