Technische Information / technical information
IGBT-Module
IGBT-modules
FZ2400R17KE3_B9
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 2400 A, V†Š = 900 V
4000
100
3600
3200
2800
2400
2000
1600
1200
800
EÓÒ, TÝÎ = 125°C
EÓËË, TÝÎ = 125°C
ZÚÌœ† : IGBT
10
1
i:
1
2
3
rÍ[K/kW]: 0,9 3,6 3,6 0,9
4
400
τÍ[s]:
0,01 0,03 0,09 0,2
0
0,1
0,001
0,0
1,0
2,0
3,0
R• [Â]
4,0
5,0
6,0
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 0,8 Â, TÝÎ = 125°C
5200
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
4800
4400
TÝÎ = 25°C
TÝÎ = 125°C
4000
3600
3200
2800
2400
2000
1600
1200
800
800
I†, Modul
I†, Chip
400
400
0
0
0
200 400 600 800 1000 1200 1400 1600 1800
V†Š [V]
0,0
0,5
1,0
1,5
VŒ [V]
2,0
2,5
3,0
prepared by: Martin Wölz
date of publication: 2004-7-16
revision: 2.1
approved by: Christoph Lübke
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