Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KS4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 100 A, V†Š = 600 V, TÝÎ = 125°C
50
1
45
40
35
30
25
20
15
10
5
EÓÒ
EÓËË
ZÚÌœ† : IGBT
0,1
i:
rÍ[K/W]: 0,0036
1
2
3
4
0,01097 0,09564 0,07979
0,065
τÍ[s]:
0,0000119 0,00236 0,026
0
0,01
0,001
0
5
10 15 20 25 30 35 40 45 50 55
R• [Â]
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 125°C
220
200
180
160
140
120
100
80
200
TÝÎ = 25°C
TÝÎ = 125°C
175
150
125
100
75
60
50
40
I†, Modul
I†, Chip
25
20
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
3,0
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2003-11-26
revision: 2.1
5
EUPEC [ EUPEC GMBH ]
