Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP20R06KL4
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
stray inductance module
L
-
-
40
nH
ꢀCE
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
RCC'+EE'
-
13
-
mꢀ
min. typ. max.
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
VGE = 0V, Tvj
VGE = 0V, Tvj = 125°C,
IF=INenn
GE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
IF=INenn
GE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
IF=INenn
=
25°C,
IF
IF
=
=
VF
IRM
Qr
20 A
20 A
1000 A/us
300 V
300 V
1000 A/us
300 V
300 V
1000 A/us
300 V
300 V
-
-
1,7
1,7
2,15
-
V
V
,
- diF/dt =
25°C, VR
V
=
=
=
-
-
20
23
-
-
A
A
,
- diF/dt =
25°C, VR
Sperrverzögerungsladung
recovered charge
V
=
=
=
-
-
1
1,7
-
-
µAs
µAs
,
- diF/dt =
Abschaltenergie pro Puls
reverse recovery energy
V
V
GE = -10V, Tvj
GE = -10V, Tvj = 125°C, VR
=
25°C, VR
=
=
Erec
-
-
0,2
0,35
-
-
mWs
mWs
min. typ. max.
Transistor Brems-Chopper/ Transistor Brake-Chopper
VGE = 15V, Tvj
=
25°C, IC
=
=
VCE sat
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
20,0 A
20,0 A
-
-
1,95
2,2
2,55
-
V
V
VGE = 15V, Tvj = 125°C, IC
Gate-Schwellenspannung
gate threshold voltage
V
CE = VGE Tvj = 25°C, IC
,
=
VGE(TO)
Cies
0,5mA
4,5
5,5
1,1
5,0
-
6,5
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
-
-
-
-
-
nF
mA
nA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VGE = 0V, Tvj = 125°C, VCE
=
600V
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE = 0V, VGE = 20V, Tvj = 25°C
IGES
400
min. typ. max.
Diode Brems-Chopper/ Diode Brake-Chopper
Tvj
=
25°C,
I F
I F
=
=
VF
Durchlaßspannung
forward voltage
20A
20A
-
-
2,45
2,55
2,9
-
V
V
Tvj = 125°C,
min. typ. max.
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
T
C = 25°C
TC = 100°C, R100 = 493 ꢀ
C = 25°C
2 = R1 exp [B(1/T2 - 1/T1)]
R25
ꢁR/R
P25
-
5
-
kꢀ
%
rated resistance
Abweichung von R100
-5
5
deviation of R
100
Verlustleistung
power dissipation
T
20
mW
K
B-Wert
B-value
R
B25/50
3375
3(12)