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FP20R06KL4 参数 Datasheet PDF下载

FP20R06KL4图片预览
型号: FP20R06KL4
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT -模块 [IGBT-Module]
分类和应用: 晶体晶体管双极性晶体管局域网
文件页数/大小: 13 页 / 232 K
品牌: EUPEC [ EUPEC GMBH ]
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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FP20R06KL4  
Vorläufig  
Preliminary  
Elektrische Eigenschaften / Electrical properties  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Modulinduktivität  
stray inductance module  
L
-
-
40  
nH  
CE  
Modul Leitungswiderstand, Anschlüsse-Chip  
lead resistance, terminals-chip  
TC = 25°C  
RCC'+EE'  
-
13  
-
mꢀ  
min. typ. max.  
Diode Wechselrichter/ Diode Inverter  
Durchlaßspannung  
forward voltage  
Rückstromspitze  
peak reverse recovery current  
VGE = 0V, Tvj  
VGE = 0V, Tvj = 125°C,  
IF=INenn  
GE = -10V, Tvj  
VGE = -10V, Tvj = 125°C, VR  
IF=INenn  
GE = -10V, Tvj  
VGE = -10V, Tvj = 125°C, VR  
IF=INenn  
=
25°C,  
IF  
IF  
=
=
VF  
IRM  
Qr  
20 A  
20 A  
1000 A/us  
300 V  
300 V  
1000 A/us  
300 V  
300 V  
1000 A/us  
300 V  
300 V  
-
-
1,7  
1,7  
2,15  
-
V
V
,
- diF/dt =  
25°C, VR  
V
=
=
=
-
-
20  
23  
-
-
A
A
,
- diF/dt =  
25°C, VR  
Sperrverzögerungsladung  
recovered charge  
V
=
=
=
-
-
1
1,7  
-
-
µAs  
µAs  
,
- diF/dt =  
Abschaltenergie pro Puls  
reverse recovery energy  
V
V
GE = -10V, Tvj  
GE = -10V, Tvj = 125°C, VR  
=
25°C, VR  
=
=
Erec  
-
-
0,2  
0,35  
-
-
mWs  
mWs  
min. typ. max.  
Transistor Brems-Chopper/ Transistor Brake-Chopper  
VGE = 15V, Tvj  
=
25°C, IC  
=
=
VCE sat  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
20,0 A  
20,0 A  
-
-
1,95  
2,2  
2,55  
-
V
V
VGE = 15V, Tvj = 125°C, IC  
Gate-Schwellenspannung  
gate threshold voltage  
V
CE = VGE Tvj = 25°C, IC  
,
=
VGE(TO)  
Cies  
0,5mA  
4,5  
5,5  
1,1  
5,0  
-
6,5  
V
f = 1MHz, Tvj = 25°C  
VCE = 25 V, VGE = 0 V  
Eingangskapazität  
input capacitance  
-
-
-
-
-
nF  
mA  
nA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
VGE = 0V, Tvj = 125°C, VCE  
=
600V  
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
CE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
400  
min. typ. max.  
Diode Brems-Chopper/ Diode Brake-Chopper  
Tvj  
=
25°C,  
I F  
I F  
=
=
VF  
Durchlaßspannung  
forward voltage  
20A  
20A  
-
-
2,45  
2,55  
2,9  
-
V
V
Tvj = 125°C,  
min. typ. max.  
NTC-Widerstand/ NTC-Thermistor  
Nennwiderstand  
T
C = 25°C  
TC = 100°C, R100 = 493 ꢀ  
C = 25°C  
2 = R1 exp [B(1/T2 - 1/T1)]  
R25  
R/R  
P25  
-
5
-
kꢀ  
%
rated resistance  
Abweichung von R100  
-5  
5
deviation of R  
100  
Verlustleistung  
power dissipation  
T
20  
mW  
K
B-Wert  
B-value  
R
B25/50  
3375  
3(12)