Technische Information / technical information
IGBT-Module
IGBT-modules
FP100R06KE3
Vorläufige Daten
preliminary data
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
600
30
V
A
A
Dauergleichstrom
DC forward current
IŒ
IŒç¢
I²t
Periodischer Spitzenstrom
tÔ = 1 ms
60
repetitive peak forw. current
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
90,0
82,0
A²s
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 30 A, V•Š = 0 V
IŒ = 30 A, V•Š = 0 V
IŒ = 30 A, V•Š = 0 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1,60 2,00
1,55
1,50
V
V
V
VŒ
Iç¢
QØ
Rückstromspitze
peak reverse recovery current
IŒ = 30 A, - diŒ/dt = 600 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
22,0
24,0
27,0
A
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 30 A, - diŒ/dt = 600 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1,15
2,30
2,70
µC
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 30 A, - diŒ/dt = 600 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
0,12
0,30
0,36
mJ
mJ
mJ
EØþÊ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
1,80 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) /ðÃØþÈÙþ = 1 W/(m·K)
0,56
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
min. typ. max.
5,00
T† = 25°C
Rèë
ÆR/R
Pèë
kÂ
%
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
-5
5
Verlustleistung
power dissipation
T† = 25°C
20,0 mW
K
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
Bèëõëå
3375
prepared by: Andreas Schulz
approved by: Robert Severin
date of publication: 2007-2-8
revision: 2.0
5
EUPEC [ EUPEC GMBH ]
