Technische Information / technical information
IGBT-Module
IGBT-modules
FF200R17KE3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
1700
200
V
A
Dauergleichstrom
DC forward current
IŒ
IŒç¢
I²t
Periodischer Spitzenstrom
t« = 1 ms
400
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
6600
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 200 A, V•Š = 0 V
IŒ = 200 A, V•Š = 0 V
TÝÎ = 25°C
TÝÎ = 125°C
1,80 2,20
1,90
V
V
VŒ
Rückstromspitze
peak reverse recovery current
IŒ = 200 A, - diŒ/dt = 2700 A/µs (TÝÎ=125°C) TÝÎ = 25°C
TÝÎ = 125°C
210
230
A
A
Vç = 900 V
V•Š = -15 V
Iç¢
Sperrverzögerungsladung
recovered charge
IŒ = 200 A, - diŒ/dt = 2700 A/µs (TÝÎ=125°C) TÝÎ = 25°C
TÝÎ = 125°C
51,0
85,0
µC
µC
Vç = 900 V
V•Š = -15 V
QØ
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 200 A, - diŒ/dt = 2700 A/µs (TÝÎ=125°C) TÝÎ = 25°C
TÝÎ = 125°C
25,0
48,0
mJ
mJ
Vç = 900 V
V•Š = -15 V
EØþÊ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
0,16 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,052
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Helmut Seidelmann
approved by: Wilhelm Rusche
date of publication: 2007-3-28
revision: 2.1
2