Technische Information / technical information
IGBT-Module
IGBT-modules
FF150R12KS4
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 150 A, V†Š = 600 V
60
1
EÓÒ, TÝÎ = 125°C
EÓËË, TÝÎ = 125°C
ZÚÌœ† : IGBT
50
40
30
20
10
0
0,1
0,01
i:
1
2
3
rÍ[K/W]: 0,04454 0,0339 0,02152 0,00004
4
τÍ[s]:
0,006
0,029 0,043
1,014
0,001
0,001
0
5
10
15
R• [Â]
20
25
30
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 125°C
350
300
250
200
150
100
300
TÝÎ = 25°C
TÝÎ = 125°C
250
200
150
100
50
50
0
I†, Modul
I†, Chip
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
3,0
prepared by: Martin Knecht
date of publication: 2004-7-6
revision: 3.1
approved by: Wilhelm Rusche
5
EUPEC [ EUPEC GMBH ]
