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FB20R06KL4 参数 Datasheet PDF下载

FB20R06KL4图片预览
型号: FB20R06KL4
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT-Modules]
分类和应用: 晶体晶体管双极性晶体管局域网
文件页数/大小: 12 页 / 217 K
品牌: EUPEC [ EUPEC GMBH ]
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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FB20R06KL4  
Vorläufig  
Preliminary  
Modul Isolation/ Module Isolation  
Isolations-Prüfspannung  
insulation test voltage  
RMS, f = 50 Hz, t = 1 min.  
NTC connected to Baseplate  
VISOL  
2,5  
kV  
Elektrische Eigenschaften / Electrical properties  
Charakteristische Werte / Characteristic values  
Diode Gleichrichter/ Diode Rectifier  
min. typ. max.  
Durchlaßspannung  
T
vj = 150°C,  
vj = 150°C  
vj = 150°C  
vj = 150°C,  
C = 25°C  
I F  
=
VF  
V(TO)  
rT  
20 A  
-
-
-
0,85  
0,63  
10  
-
-
-
V
V
forward voltage  
Schleusenspannung  
threshold voltage  
T
Ersatzwiderstand  
slope resistance  
T
mꢀ  
Sperrstrom  
reverse current  
Modul Leitungswiderstand, Anschlüsse-Chip  
lead resistance, terminals-chip  
T
V R  
=
IR  
800 V  
-
-
5
4
-
-
mA  
T
RAA'+CC'  
mꢀ  
min. typ. max.  
Transistor Wechselrichter/ Transistor Inverter  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
VGE = 15V, Tvj  
=
25°C, IC  
=
=
VCE sat  
20 A  
20 A  
-
-
1,95  
2,2  
2,55  
-
V
V
V
GE = 15V, Tvj = 125°C, IC  
Gate-Schwellenspannung  
gate threshold voltage  
V
CE = VGE Tvj = 25°C, IC  
,
=
VGE(TO)  
Cies  
0,5mA  
4,5  
5,5  
1,1  
5,0  
-
6,5  
V
f = 1MHz, Tvj = 25°C  
VCE = 25 V, VGE = 0 V  
Eingangskapazität  
input capacitance  
-
-
-
-
-
nF  
mA  
nA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
ICES  
VGE = 0V, Tvj = 125°C, VCE = 600V  
VCE = 0V, VGE =20V, Tvj =25°C  
Gate-Emitter Reststrom  
gate-emitter leakage current  
IGES  
400  
IC = INenn  
,
V CC =  
300 V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
V
GE = ±15V, Tvj  
=
25°C, RG  
=
=
td,on  
47 Ohm  
47 Ohm  
300 V  
-
-
22  
31  
-
-
ns  
ns  
VGE = ±15V, Tvj = 125°C, RG  
I
C = INenn  
,
V CC =  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
V
V
GE = ±15V, Tvj  
GE = ±15V, Tvj = 125°C, RG  
=
25°C, RG  
=
=
tr  
47 Ohm  
47 Ohm  
300 V  
-
-
23  
37  
-
-
ns  
ns  
I
C = INenn  
,
V CC =  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
V
GE = ±15V, Tvj  
=
25°C, RG  
=
=
td,off  
47 Ohm  
47 Ohm  
300 V  
-
-
143  
154  
-
-
ns  
ns  
VGE = ±15V, Tvj = 125°C, RG  
I
C = INenn  
,
V CC =  
Fallzeit (induktive Last)  
fall time (inductive load)  
V
GE = ±15V, Tvj  
=
25°C, RG  
=
=
=
tf  
47 Ohm  
47 Ohm  
300 V  
-
-
22  
38  
-
-
ns  
ns  
VGE = ±15V, Tvj = 125°C, RG  
C = INenn V CC  
GE = ±15V, Tvj = 125°C, RG  
I
,
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
V
=
Eon  
Eoff  
ISC  
47 Ohm  
=
80 nH  
-
-
-
0,73  
0,56  
80  
-
-
-
mWs  
mWs  
A
L
S
I
V
C = INenn  
GE = ±15V, Tvj = 125°C, RG  
L
,
V CC =  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
300 V  
47 Ohm  
80 nH  
47 Ohm  
360 V  
=
=
S
tP ? 10µs, VGE ? 15V, RG  
Tvj?125°C, VCC  
=
=
Kurzschlußverhalten  
SC Data  
2(11)