SH
Schnelle beschaltungslose Diode
Fast Hard Drive Diode
Datenblatt / Data sheet
D 1961SH
T
vj
= 0°C... T
vj max
V
RRM
I
FRMSM
I
FAVM
I
FSM
I²t
W
max
4500 V
3980 A
1960 A
2530 A
A
40000 A
10³ A²s
8000 10³ A²s
5 MW
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Rückwärts-Spitzensperrspannung
Kenndaten
repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Max. Ausschaltverluste
max. turn-off losses
Elektrische Eigenschaften
T
C
= 85°C, f=50Hz
T
C
= 60°C, f=50Hz
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= T
vjmax
I
FM
= 2500A, V
CL
= 2800V,
clamp circuit L
S
≤
0,25µH,
R
CL
= 68Ω, D
CL
= 34DSH65,
C
CL
= 3µF
Charakteristische Werte / Characteristic values
Gleichsperrspannung
continuous direct reverse voltage
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
200A
≤
i
F
≤
3000A
failure rate
λ
< 100
T
vj
= T
vj max
, i
F
= 2500A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
V
R(D)
v
F
V
(TO)
r
T
typ.
estimate
value
2800 V
2,16 V
2,5 V
1,11 V
1,25 V
0,42 mΩ
0,5 mΩ
typ.
max.
typ.
max.
typ.
max.
A
B
C
D
A
B
C
D
v
F
=
A
+
B
⋅
i
F
+
C
⋅
Ln
(
i
F
+
1)
+
D
⋅
i
F
max.
Spitzenwert der Durchlassverzögerungsspannung
peak value of forward recovery voltage
Sperrstrom
reverse current
Sperrverzögerungsladung
recovered charge
Rückstromspitze
peak reverse recovery current
Ausschaltverlust Energie
turn-off energy
Abklingsanftheit
reverse recovery softness factor
T
vj
= T
vjmax
, d
iF
/dt = 5000A/µs
I
FM
= 4000A
T
vj
= T
vj max
, v
R
= V
RRM
V
FRM
i
R
Q
r
0,72096
-0,000113
-0,0806
0,0469
0,6986
-0,0000753
-0,07067
0,0506
typ.
280 V
max.
150 mA
max. 12000
µAs
max.
max.
typ.
2250 A
21 Ws
1,6
T
vj
= T
vjmax
I
FM
= 2500A, V
CL
= 2800V,
clamp circuit L
S
≤
0,25µH,
R
CL
= 68Ω, C
CL
= 3µF,
D
CL
= 34DSH65, -di/dt = 1000A/µs
T
vj
= T
vjmax
I
FM
= 2500A, V
R
= 2800 V,
-di
rr
/dt
(i=0)
= 1000A/µs,
∆t
rf
= 200ns
I
RM
E
off
F
RRS
prepared by: C. Schneider
approved by: J. Przybilla
date of publication:
revision:
2006-07-19
2
Seite/page
1/10
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