BSM 35 GD 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 1.2 mA
4.5
5.5
6.5
GE
CE, C
Collector-emitter saturation voltage
CE(sat)
V
V
= 15 V, I = 35 A, T = 25 °C
-
-
2.7
3.3
3.2
3.9
GE
GE
C
j
= 15 V, I = 35 A, T = 125 °C
C
j
Zero gate voltage collector current
I
mA
nA
CES
V
V
= 1200 V, V = 0 V, T = 25 °C
-
-
0.6
2.4
1
-
CE
CE
GE
j
= 1200 V, V = 0 V, T = 125 °C
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
I
GES
V
-
-
150
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 35 A
11
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
nF
iss
V
-
-
-
2
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
oss
rss
V
0.3
0.14
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
GE
2
Oct-20-1997
EUPEC [ EUPEC GMBH ]
