Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1 ms
T
vj
= 25° C
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
I
C,nom.
I
C
I
CRM
1200
50
115
100
V
A
A
A
T
C
=25°C, Transistor
P
tot
460
W
V
GES
+/- 20V
V
I
F
50
A
I
FRM
100
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I t
2
430
A s
2
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 50A, V
GE
= 15V, T
vj
= 25°C
I
C
= 50A, V
GE
= 15V, T
vj
= 125°C
I
C
= 2mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
4,5
typ.
2,1
2,4
5,5
max.
2,6
2,9
6,5
V
V
V
V
GE
= -15V...+15V
Q
G
-
0,53
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
3,3
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
0,21
-
nF
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
-
5
mA
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: MOD-D2, Mark Münzer
approved by: SM TM; Wilhelm Rusche
date of publication: 2003-01-10
revision: 3.0
1(8)
DB_BSM50GB120DLC_3.0
2003-01-10
EUPEC [ EUPEC GMBH ]
