欢迎访问ic37.com |
会员登录 免费注册
发布采购

BSM150GD120DN2 参数 Datasheet PDF下载

BSM150GD120DN2图片预览
型号: BSM150GD120DN2
PDF下载: 下载PDF文件 查看货源
内容描述: Econopacks收缩频率转换器 [Econopacks shrink frequency converters]
分类和应用: 转换器
文件页数/大小: 2 页 / 64 K
品牌: EUPEC [ EUPEC GMBH ]
 浏览型号BSM150GD120DN2的Datasheet PDF文件第1页  
APPLICATIONS  
POWER SEMICONDUCTORS  
Collector-  
em itter  
Collector  
current  
Econopack 1  
Six-pack  
Econopack 2  
Six-pack  
Econopack 3  
Six-pack  
Tripack  
voltage  
VCE in V  
IC in A  
600  
600  
10  
15  
BSM10GD60DN2  
BSM15GD60DN2  
600  
600  
20  
30  
BSM20GD60DN2  
BSM30GD60DN2  
600  
1200  
50  
10  
BSM50GD60DN2  
BSM10GD120DN2  
1200  
1200  
15  
25  
BSM15GD120DN2  
BSM25GD120DN2  
1200  
1200  
35  
50  
BSM35GD120DN2  
BSM50GD120DN2  
1200  
1200  
75  
100  
BSM75GD120DN2  
BSM100GD120DN2  
1200  
1200  
150  
200  
BSM150GD120DN2  
BSM200GD120DN2  
Table 1 IGBTs in Econopack packages cover the current ranges from 10 to 50 A at 600 V and from 10 to 200 A at 1200 V  
U
V
W
1
9
1
8
1
7
1
6
9
1
5
1
9
1
8
1
7
1
6
9
1
5
1
9
1
8
1
7
1
6
15  
1
4
3
1
4
3
1
4
3
2
0
1
P
N
2
0
1
2
0
1
P
N
1
1
1
2
2
2
1
2
3
4
5
6
7
8
10 11 12  
1
2
3
4
5
6
7
8
10 11 12  
1
2
3
4
5
6
7
8
9
10 11 12  
13/21  
P
N
P
1
2
5
9
1
5
9
1
2
5
9
6
10  
17  
2
6
10  
6
10  
19  
15  
19  
17  
15  
19  
17  
15  
U
W
V
3
7
8
11  
12  
3
4
7
8
11  
12  
3
4
7
8
11  
12  
4
N
14/20  
Fig. 2 Thanks to carefully designed pinning of the Econopack 3 package (left), tw o full bridges (right) can be connected in parallel w ithout m ajor  
layout expenditure  
separate switches in parallel and thus  
tripling the permitted collector current. Its  
versatility as a six-pack or half-bridge, as a  
tripack or single switch, reduces logistics  
and storage costs.  
Second-generation IGBT modules in Econ-  
Mario Feldvoss  
Dipl.-Ing. (FH),  
Andreas Karl  
Dipl.-Ing. (FH),  
opack 2 and Econopack 3 packages thus  
give designers of frequency converters  
flexible, low-cost and easy-to-process build-  
ing blocks for a wide power range and  
studied power engineering at Lübeck and joined  
Siemens in 1986. He initially worked on develop-  
ment of power semiconductor technologies.  
Since 1990, Mr. Veldfoss (35) has been involved  
in definition, development and support for IGBT  
modules.  
studied telecommunications in Regensburg and  
joined the Siemens Semiconductor Group as a  
designer of magnetic field sensors in 1992. In  
1995, after working as an applications engineer  
on power semiconductors, he went into product  
marketing for IGBT modules.  
variety of applications.  
h
Check #3-96-1 (HL) on Reader Service Card  
Components XXXI (1996) No. 3  
7