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EM6AA160TS-4G 参数 Datasheet PDF下载

EM6AA160TS-4G图片预览
型号: EM6AA160TS-4G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×16位DDR同步DRAM ( SDRAM ) [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 51 页 / 401 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AA160TS  
EtronTech  
Extended Mode Register Set (EMRS)  
The Extended Mode Register Set stores the data for enabling or disabling DLL and selecting output driver  
strength. The default value of the extended mode register is not defined, therefore must be written after power  
up for proper operation. The extended mode register is written by asserting low onCS ,RAS ,CAS , and WE .  
The state of A0 ~ A12, BA0 and BA1 is written in the mode register in the same cycle asCS ,RAS ,CAS , and  
WE going low. The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into  
the extended mode register. A1 is used for setting driver strength to normal, or weak. Two clock cycles are  
required to complete the write operation in the extended mode register. The mode register contents can be  
changed using the same command and clock cycle requirements during operation as long as all banks are in  
the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. Refer to the table for  
specific codes.  
Table 10. Extended Mode Resistor Bitmap  
BA1  
0
BA0  
1
A12 A11 A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
RFU must be set to “0”  
DS0  
DLL  
BA0 Mode  
A1  
0
Drive Strength  
Normal  
A0  
0
DLL  
Enable  
0
1
MRS  
EMRS  
1
weak  
1
Disable  
Etron Confidential  
9
Rev. 0.7  
July 2008