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EM6A9325BG-7.5G 参数 Datasheet PDF下载

EM6A9325BG-7.5G图片预览
型号: EM6A9325BG-7.5G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32低功耗SDRAM ( LPSDRAM ) [4M x 32 Low Power SDRAM (LPSDRAM)]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 598 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM6A9325  
4M x 32 LPSDRAM  
Overview  
The EM6A9325 Hand-held LPSDRAM is a 128M bits high-speed CMOS synchronous DRAM with low power  
consumption organized as 1,048,576 words by 32 bits by 4 banks. The Hand-held functions are new features of the size  
of the memory array and the refresh period during Self-Refresh to be programmable by which the self refresh current is  
drastically reduced.  
High data transfer rate is achieved by the pipeline architecture with a synchronous interface, burst oriented Read and  
write accesse, muti banks operation and programmable burst lengths. The EM6A9325 provides Read or Write burst  
lengths of 1, 2, 4, 8, or full page, with a burst termination option. Through the programming burst type, burst length, CAS  
latency, and driving strength in mode register and extended mode register, a variety with high performance is fulfilled and  
useful in a variety of wide bandwidth, high performance and low power application.  
Block Diagram  
Column  
Decoder  
4096  
X 256 X 32  
CELL ARRAY  
(BANK #0)  
Sense  
Amplifier  
CO N T R OL  
S IG N A L  
GE N ER A T OR  
CL K  
CKE  
CLO CK  
BUFFER  
Sense  
Amplifier  
CS #  
4096X 256  
CELL ARRAY  
(BANK #1)  
X 32  
CO M M A ND  
DECODER  
RA S#  
CA S#  
WE#  
M O D E  
R E G IS T E R  
Column  
Decoder  
CO LU MN  
COUN TER  
A 1 0 /A P  
Column  
Decoder  
4096  
CELL ARRAY  
(BANK #2)  
X 256 X 32  
ADDRESS  
BUFFER  
A 0  
A 9  
A 1 0  
A 1 1  
B A 0  
B A 1  
Sense  
Amplifier  
REFRESH  
COUN TER  
Sense  
Amplifier  
DQ  
4096  
X 256 X 32  
BUFFER  
CELL ARRAY  
(BANK #3)  
DQ 0  
D Q 3 1  
Column  
Decoder  
D Q M 0 ~3  
Preliminary  
2
Rev 0.4  
June 2003