EtronTech
EM6A9320
4Mx32 DDR SDRAM
D.C. Characteristics
(VDD = 2.8V ± 5%, TA = 0~70 °C)
2.8 3.0 3.3 3.5 3.6
4
5
Parameter & Test Condition
Symbol
Unit
Max
OPERATING CURRENT :
One bank; Active-
Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and
DQS inputs changing once per clock cycle; Address
and control inputs changing once every two clock
cycles.
IDD0 330 320 280 260 250 180 160 mA
IDD1 450 440 380 360 340 260 240 mA
OPERATING CURRENT :
One bank; Active-Read-
Precharge; BL=4; CL=4; tRCDRD=4*tCK
;
tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and
control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY
IDD2P 50 50 50 50 50
45 40 mA
CURRENT:
All banks idle; power-down mode;
tCK=tCK(min); CKE=LOW
IDLE STANDLY CURRENT :
CKE = HIGH;
CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);
Address and control inputs changing once per clock
cycle; VIN=VREF for DQ, DQS and DM
IDD2N 100 100 100 100 100 80 80 mA
ACTIVE POWER-DOWN STANDBY CURRENT :
bank active; power-down mode; CKE=LOW;
tCK=tCK(min)
one
IDD3P 50 50 50 50 50
45 40 mA
ACTIVE STANDBY CURRENT :
CS#=HIGH;CKE=HIGH; one bank active ;
IDD3N 140 135 120 110 110 100 100 mA
IDD4R 560 540 480 450 450 440 420 mA
tRC=tRC(max);tCK=tCK(min);Address and control inputs
changing once per clock cycle; DQ,DQS,and DM
inputs changing twice per clock cycle
OPERATING CURRENT BURST READ :
BL=2;
READS; Continuous burst; one bank active; Address
and control inputs changing once per clock cycle;
tCK=tCK(min); lout=0mA;50% of data changing on
every transfer
OPERATING CURRENT BURST Write :
BL=2;
WRITES; Continuous Burst ;one bank active; address
and control inputs changing once per clock cycle;
tCK=tCK(min); DQ,DQS,and DM changing twice per
clock cycle; 50% of data changing on every transfer
IDD4W 470 450 400 370 360 300 270 mA
IDD5 430 430 420 410 390 300 280 mA
AUTO REFRESH CURRENT :
t
RC=tRFC(min);
tCK=tCK(min)
SELF REFRESH CURRENT:
CKE<=0.2V;tCK=tCK(min)
Sell Refresh Mode ;
IDD6
4
4
4
4
4
3
3 mA
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto
Precharge; tRC=tRC(min); tCK=tCK(min); Address and
control inputschang only during Active, READ , or
WRITE command
IDD7 920 890 780 720 710 650 550 mA
Note:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device.
2. All voltages are referenced to VSS.
3. Power-up sequence is described in previous page.
9
Rev 0.6
May. 2006
ETRON [ ETRON TECHNOLOGY, INC. ]
