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EM6A8160TSA-5G 参数 Datasheet PDF下载

EM6A8160TSA-5G图片预览
型号: EM6A8160TSA-5G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16的DDR同步DRAM (SDRAM)的 [4M x 16 DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 51 页 / 407 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6A8160TSA  
EtronTech  
Addressing Mode Select Field (A3)  
The Addressing Mode can be one of two modes, either Interleave Mode or Sequential Mode. Both Sequential  
Mode and Interleave Mode support burst length of 2, 4, and 8.  
Table 6. Addressing Mode  
A3  
0
Addressing Mode  
Sequential  
1
Interleave  
Burst Definition, Addressing Sequence of Sequential and Interleave Mode  
Table 7: Burst Address ordering  
Burst  
Length  
Start Address  
Sequential  
Interleave  
A2  
A1  
X
X
0
A0  
X
X
X
X
X
X
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0, 1  
1, 0  
0, 1, 2, 3  
1, 2, 3, 0  
2, 3, 0, 1  
3, 0, 1, 2  
0, 1  
1, 0  
0, 1, 2, 3  
1, 0, 3, 2  
2, 3, 0, 1  
3, 2, 1, 0  
2
4
0
1
1
0
0
1
1
0
0, 1, 2, 3, 4, 5, 6, 7  
1, 2, 3, 4, 5, 6, 7, 0  
2, 3, 4, 5, 6, 7, 0, 1  
3, 4, 5, 6, 7, 0, 1, 2  
4, 5, 6, 7, 0, 1, 2, 3  
5, 6, 7, 0, 1, 2, 3, 4  
6, 7, 0, 1, 2, 3, 4, 5  
7, 0, 1, 2, 3, 4, 5, 6  
0, 1, 2, 3, 4, 5, 6, 7  
1, 0, 3, 2, 5, 4, 7, 6  
2, 3, 0, 1, 6, 7, 4, 5  
3, 2, 1, 0, 7, 6, 5, 4  
4, 5, 6, 7, 0, 1, 2, 3  
5, 4, 7, 6, 1, 0, 3, 2  
6, 7, 4, 5, 2, 3, 0, 1  
7, 6, 5, 4, 3, 2, 1, 0  
8
0
1
1
Latency Field (A6~A4)  
CAS  
This field specifies the number of clock cycles from the assertion of the Read command to the first read data.  
The minimum whole value of Latency depends on the frequency of CK. The minimum whole value  
CAS  
satisfying the following formula must be programmed into this field.  
tCAC (min) CAS Latency X tCK  
Table 8. CAS Latency  
A6  
0
A5  
0
A4  
0
CAS Latency  
Reserved  
Reserved  
Reserved  
3 clocks  
0
0
1
0
1
0
0
1
1
1
0
0
Reserved  
Reserved  
Reserved  
Reserved  
1
0
1
1
1
0
1
1
1
Etron Confidential  
7
Rev 1.2  
Apr. 2009