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EM68B08CWAH-3H 参数 Datasheet PDF下载

EM68B08CWAH-3H图片预览
型号: EM68B08CWAH-3H
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 8 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 57 页 / 482 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM68B08CWAH  
Ball Descriptions  
Table 3. Ball Descriptions  
Symbol  
Type  
Description  
CK, CK#  
Input  
Differential Clock:  
CK, CK# are driven by the system clock. All SDRAM input signals are sampled on the  
crossing of positive edge of CK and negative edge of CK#. Output (Read) data is  
referenced to the crossings of CK and CK# (both directions of crossing).  
CKE  
Input  
Clock Enable:  
CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes LOW  
synchronously with clock, the internal clock is suspended from the next clock cycle  
and the state of output and burst address is frozen as long as the CKE remains LOW.  
When all banks are in the idle state, deactivating the clock controls the entry to the  
Power Down and Self Refresh modes.  
BA0-BA1  
A0-A13  
Input  
Input  
Bank Address:  
BA0-BA1 defines to which bank the BankActivate, Read, Write, or BankPrecharge  
command is being applied.  
Address Inputs:  
A0-A13 are sampled during the BankActivate command (row address A0-A13) and  
Read/Write command (column address A0-A9 with A10 defining Auto Precharge).  
A13 row address use on x8 components only.  
CS#  
Input  
Input  
Chip Select:  
CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder.  
All commands are masked when CS# is sampled HIGH. CS# provides for external  
bank selection on systems with multiple banks. It is considered part of the command  
code.  
RAS#  
Row Address Strobe:  
The RAS# signal defines the operation commands in conjunction with the CAS# and  
WE# signals and is latched at the crossing of positive edges of CK and negative edge  
of CK#. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH,"  
either the BankActivate command or the Precharge command is selected by the WE#  
signal. When the WE# is asserted "HIGH," the BankActivate command is selected  
and the bank designated by BA is turned on to the active state. When the WE# is  
asserted "LOW," the Precharge command is selected and the bank designated by BA  
is switched to the idle state after the precharge operation.  
CAS#  
WE#  
Input  
Input  
Column Address Strobe:  
The CAS# signal defines the operation commands in conjunction with the RAS# and  
WE# signals and is latched at the crossing of positive edges of CK and negative edge  
of CK#. When RAS# is held "HIGH" and CS# is asserted "LOW," the column access  
is started by asserting CAS# "LOW." Then, the Read or Write command is selected  
by asserting WE# “HIGH " or “LOW".  
Write Enable:  
The WE# signal defines the operation commands in conjunction with the RAS# and  
CAS# signals and is latched at the crossing of positive edges of CK and negative  
edge of CK#. The WE# input is used to select the BankActivate or Precharge  
command and Read or Write command.  
Bidirectional Data Strobe:  
DQS,  
Input /  
Output  
Output with read data, input with write data for source synchronous operation. Edge-  
aligned with read data, center-aligned with write data. DQS# is only used when  
differential data strobe mode is enabled via the LOAD MODE command.  
DQS#  
Etron Confidential  
5
Rev. 1.2  
Nov. /2013