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EM68916DVAA-6H 参数 Datasheet PDF下载

EM68916DVAA-6H图片预览
型号: EM68916DVAA-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16的移动DDR同步DRAM ( SDRAM ) [8M x 16 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 322 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM68916DVAA  
EtronTech  
Pin Descriptions  
Table 2. Pin Details of EM68916D  
Symbol  
CK,  
Type  
Description  
Differential Clock: CK and CK are differential clock inputs. All address and  
control input signals are sampled on the crossing of the positive edge of CK and  
Input  
CK  
negative edge ofCK . Input and output data is referenced to the crossing of CK  
and CK (both directions of the crossing)  
CKE  
Input  
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal.  
Internal clock signals and device input buffers and output drivers. Taking CKE Low  
provides Precharge Power Down and Self Refresh operation (all banks idle) or  
Active Power Down (Row Active in any bank). CKE is synchronous for all functions  
except for disabling outputs, which is asynchronous. Input buffers, excluding  
CK,  
and CKE, are disabled during Power Down and Self Refresh modes to  
CK  
reduce standby power consumption.  
Bank Activate: BA0 and BA1 define to which bank the BankActivate, Read, Write,  
or BankPrecharge command is being applied. BA0 and BA1 also determine which  
mode register (MRS or EMRS) is loaded during a Mode Register Set command.  
BA0, BA1  
A0-A11  
Input  
Input  
Address Inputs: A0-A11 are sampled during the BankActivate command (row  
address A0-A11) and Read/Write command (column address A0-A8 with A10  
defining Auto Precharge).  
Input  
Input  
Chip Select:  
enables (sampled LOW) and disables (sampled HIGH) the  
CS  
CS  
command decoder. All commands are masked when  
is sampled HIGH.  
CS  
provides for external bank selection on systems with multiple banks. It is  
CS  
considered part of the command code.  
Row Address Strobe: The  
signal defines the operation commands in  
signals and is latched at the positive edges of  
RAS  
RAS  
WE  
conjunction with the  
and  
CAS  
CS  
CK. When  
and  
are asserted "LOW" and  
is asserted "HIGH," either  
CAS  
RAS  
the BankActivate command or the Precharge command is selected by the  
WE  
is asserted "HIGH," the BankActivate command is selected  
signal. When the  
WE  
and the bank designated by BA is turned on to the active state. When the  
is  
WE  
asserted "LOW," the Precharge command is selected and the bank designated by  
BA is switched to the idle state after the precharge operation.  
Input  
Input  
Column Address Strobe: The  
signal defines the operation commands in  
CAS  
CAS  
conjunction with the  
and  
WE  
signals and is latched at the positive edges of  
RAS  
CK. When  
is held "HIGH" and  
is asserted "LOW," the column access is  
RAS  
CS  
started by asserting  
"LOW." Then, the Read or Write command is selected  
CAS  
"HIGH " or LOW"."  
by asserting  
WE  
Write Enable: The  
signal defines the operation commands in conjunction  
signals and is latched at the positive edges of CK. The  
WE  
WE  
and  
CAS  
with the  
RAS  
input is used to select the BankActivate or Precharge command and Read or  
WE  
Write command.  
Bidirectional Data Strobe: DQS is an output with read data and an input with  
write data. DQS is edge-aligned with read data, centered in write data. It is used to  
capture data. For x16, LDQS is DQS for DQ0-DQ7 and UDQS is DQS for DQ8-  
DQ15.  
LDQS, UDQS  
Input /  
Output  
Etron Confidential  
3
Rev. 1.0  
Apr. 2009