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EM63A165TS-7G 参数 Datasheet PDF下载

EM63A165TS-7G图片预览
型号: EM63A165TS-7G
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mega ×16同步DRAM (SDRAM)的 [16Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 73 页 / 1390 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM63A165  
Pin Descriptions  
Table 1. Pin Details of EM63A165  
Description  
Symbol  
Type  
CLK  
Input  
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled  
on the positive edge of CLK. CLK also increments the internal burst counter and  
controls the output registers.  
CKE  
Input  
Clock Enable: CKE activates(HIGH) and deactivates(LOW) the CLK signal. If  
CKE goes low synchronously with clock(set-up and hold time same as other  
inputs), the internal clock is suspended from the next clock cycle and the state of  
output and burst address is frozen as long as the CKE remains low. When all  
banks are in the idle state, deactivating the clock controls the entry to the Power  
Down and Self Refresh modes. CKE is synchronous except after the device  
enters Power Down and Self Refresh modes, where CKE becomes  
asynchronous until exiting the same mode. The input buffers, including CLK, are  
disabled during Power Down and Self Refresh modes, providing low standby  
power.  
BA0,BA1  
Input  
Bank Select: BA0,BA1 input select the bank for operation.  
BA1  
0
BA0  
0
Select Bank  
BANK #A  
BANK #B  
BANK #C  
BANK #D  
0
1
1
0
1
1
A0-A12  
Input  
Address Inputs: A0-A11 are sampled during the BankActivate command (row  
address A0-A11) and Read/Write command (column address A0-A8 with A10  
defining Auto Precharge) to select one location out of the 4M available in the  
respective bank. During a Precharge command, A10 is sampled to determine if  
all banks are to be precharged (A10 = HIGH). The address inputs also provide  
the op-code during a Mode Register Set command.  
CS#  
Input  
Input  
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the  
command decoder. All commands are masked when CS# is sampled HIGH. CS#  
provides for external bank selection on systems with multiple banks. It is  
considered part of the command code.  
RAS#  
Row Address Strobe: The RAS# signal defines the operation commands in  
conjunction with the CAS# and WE# signals and is latched at the positive edges  
of CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted  
"HIGH," either the BankActivate command or the Precharge command is  
selected by the WE# signal. When the WE# is asserted "HIGH," the BankActivate  
command is selected and the bank designated by BS is turned on to the active  
state. When the WE# is asserted "LOW," the Precharge command is selected  
and the bank designated by BS is switched to the idle state after the precharge  
operation.  
CAS#  
Input  
Column Address Strobe: The CAS# signal defines the operation commands in  
conjunction with the RAS# and WE# signals and is latched at the positive edges  
of CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column  
access is started by asserting CAS# "LOW." Then, the Read or Write command  
is selected by asserting WE# "LOW" or "HIGH."  
3
Rev 1.1 Apr. 2007