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EM639165TS-6G 参数 Datasheet PDF下载

EM639165TS-6G图片预览
型号: EM639165TS-6G
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega ×16同步DRAM (SDRAM)的 [8Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 73 页 / 1303 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM639165  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
1 Clk Interval  
DQM  
BANKA  
ACTIVATE  
READ A  
COMMAND  
WRITE A  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CAS# latency=2  
DIN A  
0
DIN A  
DIN A  
DIN A  
3
t
, DQ's  
1
2
CK2  
: "H" or "L"  
Read to Write Interval  
(Burst Length 4, CAS# Latency = 2)  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
NOP  
READ A  
COMMAND  
NOP  
NOP  
NOP  
WRITE B  
DIN B  
NOP  
NOP  
NOP  
CAS# latency=2  
DIN B  
1
DIN B  
DIN B  
3
t
, DQ's  
0
2
CK2  
: "H" or "L"  
Read to Write Interval  
(Burst Length 4, CAS# Latency = 2)  
A read burst without the auto precharge function may be interrupted by a BankPrecharge/  
PrechargeAll command to the same bank. The following figure shows the optimum time that  
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Bank,  
Col A  
Bank,  
Row  
ADDRESS  
Bank(s)  
tRP  
READ A  
NOP  
NOP  
NOP  
COMMAND  
NOP  
NOP  
Precharge  
NOP  
Activate  
CAS# latency=2  
DOUT A  
DOUT A  
2
DOUT A  
DOUT A  
3
0
1
t
, DQ's  
CK2  
CAS# latency=3  
, DQ's  
DOUT A  
DOUT A  
2
DOUT A  
DOUT A  
0
1
3
t
CK3  
Read to Precharge  
(CAS# Latency = 2, 3)  
8
Rev 1.6 Feb. 2007