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EM638165 参数 Datasheet PDF下载

EM638165图片预览
型号: EM638165
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mega ×16同步DRAM (SDRAM)的 [4Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 71 页 / 1058 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM638165  
The WE# signal defines the operation commands in conjunction  
WE#  
Input  
Write Enable:  
with the RAS# and CAS# signals and is latched at the positive edges of CLK.  
The WE# input is used to select the BankActivate or Precharge command and  
Read or Write command.  
LDQM,  
UDQM  
Input  
Data Input/Output Mask:  
Controls output buffers in read mode and masks  
Input data in write mode.  
DQ0-DQ15  
Input /  
Output  
Data I/O:  
The DQ0-15 input and output data are synchronized with the positive  
edges of CLK. The I/Os are maskable during Reads and Writes.  
NC/RFU  
VDDQ  
-
No Connect:  
These pins should be left unconnected.  
Supply  
DQ Power:  
Provide isolated power to DQs for improved noise immunity.  
( 3.3V± 0.3V )  
DQ Ground:  
( 0 V )  
VSSQ  
Supply  
Provide isolated ground to DQs for improved noise immunity.  
VDD  
VSS  
Supply  
Supply  
Power Supply:  
Ground  
+3.3V ± 0.3V  
Preliminary  
Rev 0.6  
Feb. 2001  
4