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EM636327TQ-8 参数 Datasheet PDF下载

EM636327TQ-8图片预览
型号: EM636327TQ-8
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32高速同步图形DRAM ( SGRAM ) [512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)]
分类和应用: 动态存储器
文件页数/大小: 78 页 / 1387 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636327  
The DSF signal defines the operation commands  
53  
DSF  
Input  
Define Special Function:  
in conjunction with the RAS# and CAS# and WE# signals and is latched at  
the positive edges of CLK. The DSF input is used to select the masked write  
disable/enable command and block write command, and the Special Mode  
Register Set cycle.  
23, 56, 24, DQM0 - Input  
Data Input/Output Mask:  
DQM0-DQM3 are byte specific, nonpersistent I/O  
57  
DQM3  
buffer controls. The I/O buffers are placed in a high-z state when DQM is  
sampled HIGH. Input data is masked when DQM is sampled HIGH during a  
write cycle. Output data is masked (two-clock latency) when DQM is sampled  
HIGH during a read cycle. DQM3 masks DQ31-DQ24, DQM2 masks DQ23-  
DQ16, DQM1 masks DQ15-DQ8, and DQM0 masks DQ7-DQ0.  
97, 98, 100, DQ0- Input/  
1, 3, 4, 6 , 7, DQ31 Output  
60, 61, 63,  
Data I/O:  
The DQ0-31 input and output data are synchronized with the  
positive edges of CLK. The I/Os are byte-maskable during Reads and Writes.  
The DQs also serve as column/byte mask inputs during Block Writes.  
64, 68, 69,  
71, 72, 9,  
10, 12, 13,  
17, 18, 20,  
21, 74, 75,  
77, 78, 80,  
81, 83, 84  
36-45, 52,  
58, 86-95  
NC  
-
No Connect:  
These pins should be left unconnected.  
2, 8, 14, 22, VDDQ Supply  
DQ Power:  
Provide isolated power to DQs for improved noise immunity.  
59, 67, 73,  
79  
5, 11, 19,  
62, 70, 76,  
82, 99  
VSSQ Supply  
DQ Ground:  
Provide isolated ground to DQs for improved noise immunity.  
15, 35, 65,  
96  
VDD Supply  
VSS Supply  
Power Supply:  
Ground  
+3.3V±0.3V  
16, 46, 66,  
85  
Preliminary  
1998  
December  
4