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EM584161BA-85E 参数 Datasheet PDF下载

EM584161BA-85E图片预览
型号: EM584161BA-85E
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低功耗SRAM [256K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 250 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM584161  
DC Characteristics (Ta = -40 C to 85 C, V  
= 1.65V to 1.95V)  
°
°
DD  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
CE1# = V and  
IL  
Operating current @ min  
cycle time  
I
15  
2
mA  
mA  
CE2 = V and  
DD1  
IH  
= 0mA  
I
OUT  
Other Input = V  
/
Operating current @ max  
cycle time (1µs)  
IH  
I
V
DD2  
IL  
CE1# V  
DD  
-0.2V, or  
CE2 0.2V, Others  
inputs 0.2V or ≥  
I
SB  
8
µA  
Standby current  
V
-0.2V  
DD  
V
DD  
V
Output HIGH Voltage  
Output LOW Voltage  
I
= -100 µA  
= 100 µA  
V
V
OH  
OH  
OL  
0.2V  
V
0.3  
I
OL  
Notes:  
* Typical value are measured at Ta = 25°C.  
** In standby mode with CE1# V  
CE2 VDD - 0.2V or CE2 0.2V.  
- 0.2V, these limits are assured for the condition  
DD  
Capacitance (Ta = 25 C; f = 1 MHz)  
°
Parameter  
Symbol  
Min  
Typ  
Max  
10  
Unit  
pF  
Test Conditions  
Input capacitance  
Output capacitance  
C
V
= GND  
= GND  
IN  
IN  
C
10  
pF  
V
OUT  
OUT  
Notes:  
This parameter is periodically sampled and is not 100% tested.  
4
Rev 2.0  
Nov. 2003