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EM584161BA-85 参数 Datasheet PDF下载

EM584161BA-85图片预览
型号: EM584161BA-85
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低功耗SRAM [256K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 250 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM584161  
AC Characteristics and Operating Conditions(Ta = -40 C to 85 C, V  
= 1.65V to 1.95V)  
°
°
DD  
Read Cycle  
EM584161  
-85 -70  
Min Max Min Max  
Symbol  
Parameter  
Unit  
t
Read cycle time  
85  
70  
85  
85  
85  
45  
45  
70  
70  
70  
35  
35  
RC  
t
Address access time  
AA  
t
Chip Enable (CE1#) Access Time  
Chip Enable (CE2) Access Time  
Output enable access time  
CO1  
t
CO2  
t
OE  
t
Data Byte Control Access Time  
BA  
t
Chip Enable Low to Output in Low-Z  
Output enable Low to Output in Low-Z  
Data Byte Control Low to Output in Low-Z  
Chip Enable High to Output in High-Z  
Output Enable High to Output in High-Z  
Data Byte Control High to Output in High-Z  
Output Data Hold Time  
10  
3
10  
3
ns  
LZ  
t
OLZ  
t
5
5
BLZ  
t
35  
35  
35  
25  
25  
25  
HZ  
t
OHZ  
t
BHZ  
t
10  
10  
OH  
Write Cycle  
EM584161  
-85 -70  
Min Max Min Max  
Symbol  
Parameter  
Unit  
t
Write cycle time  
85  
55  
70  
70  
0
70  
55  
60  
60  
0
WC  
t
Write pulse width  
WP  
t
Chip Enable to end of write  
Data Byte Control to end of Write  
Address setup time  
CW  
t
BW  
t
AS  
ns  
t
Write Recovery time  
WE# Low to Output in High-Z  
WE# High to Output in Low-Z  
Data Setup Time  
0
0
WR  
t
35  
30  
WHZ  
t
5
5
OW  
t
35  
0
30  
0
DS  
t
Data Hold Time  
DH  
AC Test Condition  
Output load : 30pF + one TTL gate  
Input pulse level : 0.2V, VDD-0.2V  
Timing measurements : 0.5 x VDD  
tR, tF : 5ns  
5
Rev 2.0  
Nov. 2003