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EM562081BC-85 参数 Datasheet PDF下载

EM562081BC-85图片预览
型号: EM562081BC-85
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8低功耗SRAM [256K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 115 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM562081  
DC Characteristics (Ta = -40  
°C to 85  
°C, V  
= 2.7V to 3.6V)  
DD  
Parameter  
Symbol  
Test Conditions  
Min  
Typ* Max Unit  
Input low current  
I
I
= 0V to V  
- 1  
-
-
-
-
1
0.4  
-
mA  
V
IL  
IN  
DD  
Output low voltage  
V
I
= 2.1 mA  
OL  
OL  
Output high  
voltage  
V
I
= -1.0 mA  
2.2  
-
V
OH  
OH  
V
= 3.6 V , CE1# = V and  
IL  
I
Cycle time = min  
10  
-
25  
5
DD  
CE2 = V  
DD1  
Operating current  
and I  
= 0mA  
mA  
IH  
OUT  
-
-
I
Cycle time = 1ms  
Other Input = V / V  
DD2  
IH  
IL  
I
CE1# = V or CE2 = V  
IH IL  
-
0.5 mA  
DDS1  
Standby current  
I
DDS2**  
(Note)  
CE1# ³ V  
– 0.2V or CE2 £ 0.2V,  
-
1
10 mA  
DD  
Notes:  
* Typical value are measured at Ta = 25°C, and not 100% tested.  
** In standby mode with CE1# ³ V  
CE2 ³ VDD - 0.2V or CE2 £ 0.2V.  
- 0.2V, these limits are assured for the condition  
DD  
Capacitance (Ta = 25°C; f = 1 MHz)  
Parameter  
Symbol  
Min  
Typ  
Max  
10  
Unit  
pF  
Test Conditions  
Input capacitance  
Output capacitance  
C
-
-
-
-
V
= GND  
= GND  
IN  
IN  
C
10  
pF  
V
OUT  
OUT  
Notes: This parameter is periodically sampled and is not 100% tested.  
Preliminary  
4
Rev 1.0  
July 2001