Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
The IAUS300N08S5N014T is a 1.4 mΩ, topside-cooled 80 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™-5 technology. Next to others the device is designed for 48V applications. Alongside the 48V auxiliary applications, the device is primarily used in the the DC-DC converter and the main battery switch.
EasyBRIDGE 1 2200 V, 50 A Diode Bridge Module with 1700 V TRENCHSTOP™ IGBT4 Brake Chopper, PressFIT contact technology and pre-applied Thermal Interface Material. The DDB6U50N22W1RP_B11 extends the current easy drive rectifier diode portfolio up to 2.2 kV.
