IW4049B
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
VCC
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
-0.5 to 20
to +18
V
V
VIN
VOUT
IIN
-0.5 to VCC+0.5
+
10
mA
-
750
500
mW
P
D
Power Dissipation in Still Air, Plastic DIP
P
Power Dissipation per Output Transistor
Storage Temperature
100
-65 to 150
260
mW
°C
D
Tstg
TL
°C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
°
Derating - Plastic DIP: - 10 mW/ C from 65° to 125 °C
°C from 65°to 125 °C
The IW4049B has high-to-low level voltage conversion capability but not low-to-high level,thefore it is
recommended that Vin Vcc
SOIC Package
≥
Recommended Operating Conditions
Symbol
VCC
Parameter
Min
3.0
Max
Unit
V
DC Supply Voltage (Referenced to GND)
18
V
IN
(Referenced to GND)
DC Input Voltage
VCC
V
18
VOUT
TA
VCC
DC Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
V
0
-55
125
°C
The IW4049B has high-to-low level voltage conversion capability but not low-to-high level,thefore it is
recommended that Vcc
≥
This device contains protection circuitry to guard against damage due to high static voltages or
electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum
rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the
range GND(VIN or VOUT)ᆪ VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC
Unused outputs must be left open.
BEIJING ESTEK ELECTRONICS CO.,LTD
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