E 75N075
HEXFET® Power MOSFET
Electrical Characteristics @TJ=25 ْ°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
75
Test Conditions
VGS=0V,ID=250uA
V(BR)DSS
△V(BR)DSS/
△TJ
Drain-to-Source Breakdown Voltage
—
—
V
Breakdown Voltage Temp. Coefficient — 0.074 — V/°C Reference to 25°C,ID=1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-resistance —
—
13.0
4.0
—
VGS=10V,ID=40A ⑤
VDS=VGS, ID=250μA
VDS=25V,ID=40A ⑤
VDS=75V,VGS=0V
VDS=60V,VGS=0V,TJ=150°C
VGS=20V
mΩ
V
Gate Threshold Voltage
2.0 —
Forward Transconductance
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
64
49
48
S
gfs
25
IDSS
Drain-to-Source Leakage current
μA
250
100
-100
160
29
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
IGSS
nA
VGS=-20V
Qg
ID=40A
VDS=60V
nC
nS
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain ("Miller") charge
Turn-on Delay Time
VGS=10V See Fig.6 and 13⑤
55
—
VDD=38V
ID=40A
Rise Time
—
RG=2.5Ωꢀ
VGS=10V See Figure 10⑤
Turn-Off Delay Time
Fall Time
—
td(off)
tf
—
Between lead,
6mm(0.25in.)
LD
LS
Internal Drain Inductance
Internal Source Inductance
—
—
4.5
7.5
—
—
nH from package
and center of
die contact
Ciss
Coss
Crss
Input Capacitance
—
—
—
3820 —
VGS=0V
VDS=25V
pF
Output Capacitance
610
130
—
—
f=1.0MHZ See Figure 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current .
(Body Diode)
Min.
Typ.
Max.
Units
A
Test Conditions
MOSFET symbol
showing the
IS
—
—
75
integral reverse
p-n junction diode.
Pulsed Source Current
.
ISM
—
—
300
(Body Diode) ②
VSD Diode Forward Voltage
—
—
—
—
1.3
150
610
V
TJ=25°C,IS=40A,VGS=0V ⑤
trr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
100
410
nS TJ=25°C,IF=40A
di/dt=100A/μs ⑤
nC
Qrr
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
ton
Notes:
①
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)
③
Starting TJ = 25°C, L = 370mH, RG = 25Ω, IAS = 40A,
VGS=10V (See Figure 12)
ISD ≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS,TJ ≤ 175°C
④
⑤
②
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
ESTEK [ Estek Electronics Co. Ltd ]
