E 24N
HEXFET® Power MOSFET
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.07
Ω
V
S
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
4.5
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 5.3
––– ––– 7.6
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
–––
–––
–––
–––
4.9 –––
34 –––
19 –––
27 –––
ID = 10A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
RD = 2.6Ω, See Fig. 10
Between lead,
D
LD
Internal Drain Inductance
–––
–––
4.5
6mm (0.25in.)
nH
pF
G
from package
–––
–––
–––
–––
LS
Internal Source Inductance
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 370 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
65 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– –––
––– –––
17
68
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 10A, VGS = 0V
TJ = 25°C, IF = 10A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 56 83
––– 120 180
V
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
ESTEK [ Estek Electronics Co. Ltd ]
