ESMT
M52D16161A
Operation Temperature Condition -40°C~85°C
DC CHARACTERISTICS
°C
°C
)
(Recommended operating condition unless otherwise noted, TA = -40
~ 85
Version
-7.5
Parameter
Symbol
Test Condition
Unit Note
-6
-10
Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
Operating Current
(One Bank Active)
ICC1
50
45
40
mA
1
Precharge Standby
Current in power-down
mode
ICC2P
CKE ≤ VIL(max), tCC =15ns
0.18
0.15
mA
mA
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
ICC2PS
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns
5.5
1
mA
ICC2N
Precharge Standby
Current in non
power-down mode
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
ICC2NS
mA
mA
ICC3P
1.5
1
CKE ≤ VIL(max), tCC =15ns
Active Standby Current
in power-down mode
ICC3PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Active Standby Current
in non power-down
mode
Input signals are changed one time during 2clks
ICC3N
12
6
mA
mA
All other pins ≥ VDD-0.2V or ≤ 0.2V
(One Bank Active)
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
ICC3NS
Operating Current
(Burst Mode)
IOL= 0 mA, Page Burst
All Band Activated, tCCD = tCCD(min)
ICC4
ICC5
70
55
65
50
60
45
mA
1
2
Refresh Current
mA
°C
tRFC ≥ tRFC(min)
TCSR range
2 Banks
15
85
160
140
130
180
160
140
Self Refresh Current
ICC6
CKE ≤ 0.2V
uA
uA
1 Bank
1/2 Bank
Deep Power Down
Current
ICC7
CKE ≤ 0.2V
10
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 32ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2009
Revision : 1.1 4/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
