ESMT
M24L48512SA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Latch-up Current ....................................................> 200 mA
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[4, 5, 6] .......................................−0.4V to 3.7V
DC Input Voltage[4, 5, 6] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Operating Range
Range
Extended
Industrial
Ambient Temperature (TA)
−25°C to +85°C
VCC
2.7V to 3.6V
2.7V to 3.6V
−40°C to +85°C
Electrical Characteristics (Over the Operating Range)
-55, 60, 70
Parameter
Description
Test Conditions
Unit
Min.
Typ.[3]
Max.
VCC
VOH
Supply Voltage
Output HIGH
Voltage
2.7
3.0
3.6
V
V
IOH = −0.1 mA
VCC – 0.4
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
VOL
VIH
VIL
IIX
IOL = 0.1 mA
0.4
VCC + 0.4
0.4
V
V
0.8 * VCC
-0.4
-1
V
GND ≤ VIN ≤ Vcc
+1
µA
µA
Output Leakage
Current
GND ≤ VOUT ≤ Vcc, Output
Disabled
IOZ
-1
+1
14 for 55ns speed
14 for 60 ns speed
8 for 70 ns speed
22 for 55 ns speed
22 for 60 ns speed
15 for 70 ns speed
V
I
CC = 3.6V,
OUT = 0 mA,
CMOS level
f = fMAX = 1/tRC
f = 1 MHz
VCC Operating
Supply Current
ICC
mA
µA
1 for all speed 5 for all speeds
Automatic CE
Power-down
CE ≥ VCC − 0.2V, VIN ≥ VCC
− 0.2V, VIN ≤ 0.2V, f =
Current —CMOS fMAX(Address and Data Only),
ISB1
150
17
250
40
Inputs
f = 0, VCC = 3.6V
Automatic CE
Power-down
Current —CMOS
Inputs
CE ≥ VCC − 0.2V, VIN ≥ VCC
− 0.2V or VIN ≤ 0.2V, f = 0, VCC
= 3.6V
ISB2
µA
Capacitance[7]
Parameter
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz
CC = VCC(typ)
Max.
8
8
Unit
pF
pF
CIN
COUT
V
Notes:
4.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
5.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
6.Overshoot and undershoot specifications are characterized and are not 100% tested.
7.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.1 3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
