ESMT
M24L416256DA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Latch-up Current ....................................................> 200 mA
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
Operating Range
Range
Ambient Temperature (TA) VCC
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Extended
Industrial
−25°C to +85°C
−40°C to +85°C
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
-55, 60, 70
Typ.[2]
3.0
Parameter
Description
Test Conditions
Unit
Min.
Max.
VCC
VOH
Supply Voltage
Output HIGH
Voltage
2.7
3.6
V
V
IOH = −0.1 mA
VCC – 0.4
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
VOL
VIH
VIL
IIX
IOL = 0.1 mA
0.4
V
0.8 * VCC
VCC + 0.4
0.62
+1
V
V
F = 0
-0.4
-1
GND ≤ VIN ≤ Vcc
µA
µA
Output Leakage
Current
GND ≤ VOUT ≤ Vcc, Output
Disabled
IOZ
-1
+1
14 for –55
14 for –60
08 for –70
22 for –55
22 for –60
15 for –70
V
I
CC = 3.6V,
OUT = 0 mA,
CMOS level
f = fMAX = 1/tRC
f = 1 MHz
VCC Operating
Supply Current
ICC
mA
µA
µA
1 for all speeds 5 for all speeds
CE1 ≥ VCC − 0.2V, CE2 ≤
0.2V, VIN ≥ VCC − 0.2V, VIN
0.2V, f = fMAX(Address and Data
Only),f = 0 ( OE , WE ,BHE and
BLE )
Automatic CE1
Power-down
Current —CMOS
Inputs
≤
ISB1
150
250
40
Automatic CE1
Power-down
Current —CMOS
Inputs
CE1 ≥ VCC − 0.2V, CE2 ≤
0.2V, VIN ≥ VCC − 0.2V or VIN
≤ 0.2V, f = 0, VCC = 3.6V
ISB2
17
Capacitance[9]
Parameter
CIN
Description
Test Conditions
TA = 25°C, f = 1 MHz
CC = VCC(typ)
Max.
Unit
Input Capacitance
Output Capacitance
8
8
pF
pF
V
COUT
Thermal Resistance[9]
Parameter
θJA
Description
Thermal Resistance (Junction to Ambient)
Test Conditions
VFBGA
Unit
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
°C/W
55
θJC
°C/W
Thermal Resistance (Junction to Case)
17
Notes:
6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
7.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.5 4/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
