ESMT
M24L28256SA
Maximum Ratings
Static Discharge Voltage ........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to
Ground Potential . ............... ............ ...........−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[4, 5, 6] .................................−0.4V to 3.7V
DC Input Voltage[4, 5, 6].................... .........−0.4V to 3.7V
Output Current into Outputs (LOW) ...............................20 mA
Operating Range
Ambient
Temperature (TA)
Range
VCC
Extended
Industrial
−25°C to +85°C
2.7V to 3.6V
2.7V to 3.6V
−40°C to +85°C
Electrical Characteristics (Over the Operating Range)
-55
-70
Parameter
Description
Test Conditions
Unit
Typ
.[3]
3.0
Typ.
Max.
[3]
Min.
2.7
Max. Min.
VCC
VOH
Supply Voltage
Output HIGH
Voltage
3.6
2.7
3.0
3.6
V
V
VCC
-
VCC
-
IOH = −0.1 mA
0.4
0.4
Output LOW
Voltage
VOL
IOL = 0.1 mA
0.4
0.4
V
Input HIGH
Voltage
Input LOW Voltage
Input Leakage
Current
0.8*
VCC
-0.4
VCC
0.4
0.4
+
0.8*
VCC
-0.4
VCC
+0.4
0.4
VIH
VIL
IIX
V
V
GND ≤VIN ≤ VCC
-1
-1
+1
-1
-1
+1
µA
Output Leakage
Current
GND
Disable
≤
VOUT
≤
VCC , Output
IOZ
ICC
+1
22
5
+1
15
5
µA
f = fMAX = 1/tRC
f = 1 MHz
VCC = 3.6V
IOUT = 0mA
CMOS levels
14
1
8
1
VCC Operating
Supply Current
mA
Automatic CE
Power-Down
Current
CE ≥ VCC−0.2V,
VIN ≥ VCC − 0.2V, VIN ≤ 0.2V,
f = fMAX (Address and Data Only),
f = 0
ISB1
40
9
250
40
40
9
250
40
µA
µA
—CMOS Inputs
Automatic CE
Power-Down
Current
CE ≥ VCC−0.2V,
VIN ≥ VCC − 0.2V, VIN ≤ 0.2V,
f = 0, VCC = 3.6V
ISB2
—CMOS Inputs
Capacitance[7]
Parameter
Description
Test Conditions
Max.
Unit
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz
8
8
pF
pF
VCC = VCC(typ)
Thermal Resistance[7]
Parameter
Description
Test Conditions
BGA
55
Unit
°C/W
°C/W
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
ΘJA
ΘJC
Thermal Resistance(Junction to Ambient)
Thermal Resistance (Junction to Case)
17
Notes:
4.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
5.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
6.Overshoot and undershoot specifications are characterized and are not 100% tested.
7.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1 3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
