ESMT
M24L216128SA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Static Discharge Voltage ........................................ >2001V
(per MIL-STD-883, Method 3015)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Latch-up Current ....................................................> 200 mA
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ..................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[3, 4, 5] .......................................−0.4V to 3.7V
DC Input Voltage[3, 4, 5] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ...............................20 mA
Operating Range
Ambient
Range
VCC
Temperature(TA)
−25°C to +85°C
−40°C to +85°C
Extended
Industrial
2.7V to 3.6V
2.7V to 3.6V
Electrical Characteristics (Over the Operating Range)
-55
-70
Parameter
Description
Test Conditions
Unit
Typ
.[5]
Typ.
[5]
Min.
Max. Min.
Max.
VCC
VOH
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
2.7
3.0
3.6
2.7
VCC
0.4
3.0
3.6
V
V
VCC
-
-
IOH = −0.1 mA
IOL = 0.1 mA
VCC = 2.70V
VCC = 2.70V
0.4
VOL
0.4
0.4
V
Input HIGH
Voltage
Input LOW Voltage
Input Leakage
Current
0.8*
VCC
-0.4
VCC
0.4V
0.4
+
0.8*
VCC
-0.4
VCC+
0.4V
0.4
VIH
VIL
IIX
VCC = 2.7V to 3.6V
V
V
GND ≤VIN ≤ VCC
-1
-1
+1
-1
-1
+1
µA
Output Leakage
Current
IOZ
ICC
GND ≤ VOUT ≤ VCC, Output Disabled
+1
22
5
+1
15
5
µA
mA
mA
f = fMAX = 1/tRC
f = 1 MHz
V
I
CC = VCCmax
OUT = 0mA
14
1
8
1
VCC Operating
Supply Current
CMOS levels
CE ≥VCC − 0.2V
Automatic CE
Power-Down
Current
VIN ≥VCC − 0.2V, VIN ≤ 0.2V, f = fMAX
(Address and Data Only), f = 0 ( OE ,
WE ,BHE and BLE ), VCC=3.6V
ISB1
40
9
250
40
40
9
250
40
µA
µA
—CMOS Inputs
Automatic CE
Power-Down
Current
CE ≥VCC−0.2V
VIN ≥ VCC − 0.2V or VIN ≤ 0.2V, f = 0,
VCC =3.6V
ISB2
—CMOS Inputs
Capacitance[9]
Parameter
Description
Test Conditions
Max.
Unit
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz
8
8
pF
pF
VCC = VCC(typ)
Thermal Resistance[9]
Parameter
Description
Test Conditions
BGA
Unit
ΘJA
Thermal Resistance(Junction to Ambient) Test conditions follow standard test 55
methods and procedures for measuring
°C/W
thermal impedance, per EIA/ JESD51.
ΘJC
Thermal Resistance (Junction to Case)
17
°C/W
Notes: 6.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
7.VIH(Max) = VCC + 0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after any design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2 4/14
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
