ESMT
M14D5121632A (2A)
DC Specifications
(IDD values are for the operation range of Voltage and Temperature)
Version
Unit
Parameter
Symbol
Test Condition
-1.5
-1.8
-2.5
One bank;
tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS (IDD)min;
CKE is High, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating Current
(Active - Precharge)
IDD0
100
80
75
mA
mA
One bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
t
t
CK = tCK (IDD), tRC = tRC (IDD),
RAS = tRAS (IDD)min, tRCD = tRCD (IDD);
Operating Current
(Active - Read -
Precharge)
IDD1
130
100
95
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
All banks idle;
Precharge
Power-Down
Standby Current
t
CK = tCK (IDD); CKE is LOW;
IDD2P
IDD2Q
15
60
12
40
12
40
mA
mA
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
All banks idle;
tCK = tCK (IDD); CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Precharge Quiet
Standby Current
All banks idle;
tCK = tCK (IDD); CKE is HIGH, CS is HIGH;
Other control and address bus inputs are SWITCHING;
Idle Standby Current IDD2N
55
45
45
mA
mA
Data bus inputs are SWITCHING
All banks open;
Fast PDN Exit
45
30
35
20
35
20
tCK = tCK (IDD); CKE is LOW;
Other control and address bus inputs
are STABLE;
Data bus input are FLOATING
MRS(12) = 0
Active Power-down
IDD3P
Standby Current
Slow PDN Exit
MRS(12) = 1
All banks open;
tCK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);
CKE is HIGH, CS is HIGH between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Active Standby
IDD3N
60
50
50
mA
mA
Current
All banks open, continuous burst Reads, IOUT = 0mA;
BL = 4, CL = CL (IDD), AL = 0;
Operation Current
t
CK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);
IDD4R
180
160
140
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
(Read)
Data pattern is the same as IDD4W;
All banks open, continuous burst Writes;
BL = 4, CL = CL (IDD), AL = 0;
t
CK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);
Operation Current
IDD4W
170
150
130
mA
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
(Write)
Data bus inputs are SWITCHING
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2016
Revision : 1.0 6/64