ESMT
M13S2561616A (2K)
Operation Temperature Condition -40°C~85°C
AC Timing Parameter & Specifications (Note: 1~6, 9~10)
-5
-6
Symbol
Unit
Note
Parameter
min
7.5
5
max
12
min
7.5
6
max
12
CL2
CL2.5
CL3
ns
ns
Clock period
tCK
12
12
5
12
6
12
tAC
-0.7
+0.7
-0.7
+0.7
DQ output access time from CLK/ CLK
CLK high-level width
tCH
tCL
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
tCK
tCK
CLK low-level width
tDQSCK
-0.55
+0.55
1.25
-0.6
+0.6
1.25
ns
DQS output access time from CLK/ CLK
Clock to first rising edge of DQS delay
DQ and DM input setup time (to DQS)
DQ and DM input hold time (to DQS)
tDQSS
tDS
tDH
tDIPW
tIS
0.72
0.45
0.45
1.75
0.7
0.72
0.45
0.45
1.75
0.7
tCK
ns
ns
ns
ns
ns
ns
ns
DQ and DM input pulse width (for each input)
Address and Control input setup time (fast)
Address and Control input hold time (fast)
Address and Control input setup time (slow)
Address and Control input hold time (slow)
18
15,17~19
15,17~19
16~19
tIH
0.7
0.7
tIS
0.9
0.9
tIH
0.9
0.9
16~19
Control and Address input pulse width (for
each input)
tIPW
2.2
2.2
ns
18
DQS input high pulse width
tDQSH
tDQSL
tDSS
0.35
0.35
0.2
0.35
0.35
0.2
tCK
tCK
tCK
tCK
ns
DQS input low pulse width
DQS falling edge to CLK setup time
DQS falling edge hold time from CLK
Data strobe edge to output data edge
tDSH
0.2
0.2
tDQSQ
0.4
0.4
22
11
tHZ
tLZ
tHP
+0.7
+0.7
ns
ns
ns
Data-out high-impedance time from CLK/ CLK
Data-out low-impedance time from CLK/ CLK
Clock half period
-0.7
+0.7
-0.7
+0.7
11
tCLmin or
tCHmin
tCLmin or
tCHmin
20,21
21
DQ/DQS output hold time from DQS
Data hold skew factor
tQH
tQHS
tRAS
tRC
t
HP- tQHS
t
HP- tQHS
ns
ns
ns
ns
0.5
0.5
Active to Precharge command
40
55
70K
42
60
70K
Active to Active /Auto Refresh command period
Auto Refresh to Active / Auto Refresh
command period
tRFC
70
72
ns
Active to Read, Write delay
tRCD
tRP
tRAP
tRRD
15
15
15
10
18
18
18
12
ns
ns
ns
ns
Precharge command period
Active to Read with Auto Precharge command
Active bank A to Active bank B command
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2010
Revision : 1.2 9/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
