ESMT
M13S128324A
Operation Temperature Condition -40~85°C
AC Timing Parameter & Specifications-continued
-5
-6
Symbol
Unit
Parameter
Min
Max
Min
Max
tCLmin
or
tCLmin
or
tCHmin
-
-
Half Clock Period
tHP
tQH
tRAS
tRC
ns
ns
t
CHmin
tHP-0.
45
tHP-0.
5
DQ-DQS output hold time
-
-
ACTIVE to PRECHARGE
command
120K
ns
120K
ns
8
7
tCK
tCK
tCK
Row Cycle Time
12
14
-
-
10
12
-
-
AUTO REFRESH Row Cycle
Time
tRFC
ACTIVE to READ,WRITE
delay
tRCD
tRP
4
4
-
-
3
3
-
-
tCK
tCK
PRECHARGE command
period
ACTIVE to READ with
AUTOPRECHARGE
command
tRAP
4
-
3
-
tCK
ACTIVE bank A to ACTIVE
bank B command
tRRD
tWR
2
15
2
-
-
-
2
15
2
-
-
-
tCK
ns
tCK
Write recovery time
Write data in to READ
command delay
tWTR
Col. Address to Col. Address
delay
tCCD
tREFI
1
-
-
1
-
-
tCK
us
Average periodic refresh
interval
7.8
7.8
Write preamble
tWPRE
tWPST
tRPRE
tRPST
0.25
0.4
-
0.25
0.4
-
tCK
tCK
tCK
tCK
Write postamble
0.6
1.1
0.6
0.6
1.1
0.6
DQS read preamble
DQS read postamble
0.9
0.9
0.4
0.4
Clock to DQS write preamble
setup time
tWPRES
0
2
-
-
0
2
-
-
ns
Load Mode Register /
Extended Mode register
cycle time
tMRD
tCK
Exit self refresh to READ
command
tXSRD
tXSNR
200
75
-
-
200
-
-
tCK
ns
Exit self refresh to
non-READ command
75
(tWR/tC
K) +
(tRP/tC
(tWR/tC
Autoprecharge write
recovery+Precharge time
)
K
tDAL
-
-
tCK
+(tRP/t
)
)
K
CK
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.0
8/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
