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M13S128168A_1 参数 Datasheet PDF下载

M13S128168A_1图片预览
型号: M13S128168A_1
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行双倍数据速率SDRAM [2M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1582 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A  
Operation temperature condition -40°C~85°C  
Absolute Maximum Rating  
Parameter  
Voltage on any pin relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Storage temperature  
Symbol  
VIN, VOUT  
VDD  
Value  
Unit  
V
-0.5 ~ 3.6  
-1.0 ~ 3.6  
-0.5 ~ 3.6  
-55 ~ +150  
V
VDDQ  
V
TSTG  
°C  
W
Power dissipation  
PD  
IOS  
TBD  
50  
Short circuit current  
mA  
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.  
Functional operation should be restricted to recommend operation condition.  
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.  
DC Operation Condition & Specifications  
DC Operation Condition  
Recommended operating conditions (Voltage reference to VSS = 0V, TA = -40 to 85°C )  
Parameter  
Symbol  
VDD  
Min  
2.375  
Max  
2.75  
Unit  
V
Note  
Supply voltage  
I/O Supply voltage  
I/O Reference voltage  
VDDQ  
2.375  
2.75  
V
VREF  
0.49*VDDQ  
VREF - 0.04  
VREF + 0.15  
-0.3  
0.51*VDDQ  
VREF + 0.04  
VDDQ + 0.3  
VREF - 0.15  
V
1
2
I/O Termination voltage (system)  
Input logic high voltage  
VTT  
V
VIH (DC)  
VIL (DC)  
V
Input logic low voltage  
V
V
VIN (DC)  
-0.3  
VDDQ + 0.3  
Input Voltage Level, CLK and CLK inputs  
V
VID (DC)  
0.36  
-2  
VDDQ + 0.6  
3
4
Input Differential Voltage, CLK and CLK inputs  
Input leakage current  
II  
μ A  
μ A  
2
5
Output leakage current  
IOZ  
-5  
Output High Current (Normal strength driver)  
(VOUT =VDDQ-0.373V, min VREF, min VTT)  
IOH  
IOL  
IOH  
IOL  
-16.8  
+16.8  
-9  
mA  
mA  
mA  
mA  
Output Low Current (Normal strength driver)  
(VOUT = 0.373V)  
Output High Current (Weak strength driver)  
(VOUT =VDDQ-0.763V, min VREF, min VTT)  
Output Low Current (Weak strength driver)  
(VOUT = 0.763V)  
+9  
Notes 1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.  
Peak-to-peak noise on VREF may not exceed 2% of the DC value.  
2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set equal  
to VREF, and must track variations in the DC level of VREF  
.
3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .  
4. VIN = 0V to VDD, All other pins are not tested under VIN = 0V.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2009  
Revision : 1.2 4/49