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M12S64322A-7TG 参数 Datasheet PDF下载

M12S64322A-7TG图片预览
型号: M12S64322A-7TG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32位×4银行同步DRAM [512K x 32 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 725 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12S64322A  
AC OPERATING TEST CONDITIONS (VDD = 2.5V± 0.2V TA = 0 to 70°C)  
Parameter  
Input levels (Vih/Vil)  
Value  
0.9 * VDDQ / 0.2  
0.5 * VDDQ  
tr/tf = 1/1  
Unit  
V
Input timing measurement reference level  
Input rise and fall-time  
V
ns  
V
Output timing measurement reference level  
Output load condition  
0.5 * VDDQ  
See Fig. 2  
(Fig. 1) DC Output Load Circuit  
(Fig. 2) AC Output Load Circuit  
OPERATING AC PARAMETER  
(AC operating conditions unless otherwise noted)  
Version  
Parameter  
Symbol  
Unit  
Note  
-6  
-7  
Row active to row active delay  
tRRD(min)  
12  
14  
20  
ns  
ns  
1
1
tRCD(min)  
18  
RAS to CAS delay  
Row precharge time  
tRP(min)  
18  
42  
20  
42  
ns  
ns  
1
1
tRAS(min)  
tRAS(max)  
tRC(min)  
Row active time  
100  
us  
Row cycle time  
@ Operating  
60  
63  
ns  
1
2
2
2
Last data in to col. address delay  
Last data in to row precharge  
Last data in to burst stop  
tCDL(min)  
tRDL(min)  
tBDL(min)  
1
2
1
CLK  
CLK  
CLK  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May. 2007  
Revision: 1.0 7/46